Atomic layer Chemical Vapor Deposition (ALCVD)

Atomic layer Chemical Vapor Deposition (ALCVD)

ALD is a method in which a substance can be deposited on a substrate layer by layer in the form of a single atomic film. Atomic layer deposition is similar to common chemical deposition. But in the process of atomic layer deposition, the chemical reaction of the new atomic film is directly related to the previous one, in such a way that only one layer of atoms is deposited at a time. Due to the self-limitation and complementarity of atomic layer chemical vapor deposition (CVD), this technique has excellent control over the composition and thickness of the films, and the prepared films have good conformability, high purity, and uniformity. The influencing factors of film formation are as follows: (1) In the ALD process, there are usually two different deposition stages: initial deposition and subsequent growth. The growth modes of the film are island growth and layer growth respectively, among which the initial deposition stage has a non-negligible influence on the film morphology. (2) The results show that the roughness of the film is affected by the precursor temperature, the vacuum degree of the reaction chamber, the substrate temperature, and other factors. Substrate temperature has the most significant effect on the initial deposition time and growth rate. In the temperature window, the lower the substrate temperature is, the slower the film grows, the longer the initial deposition time is, and the surface roughness increases. With the increase in substrate temperature, the initial deposition process is shorter and the film is closed quickly. The higher the temperature is, the growth rate is closer to the monomolecular cycle, and the surface roughness is smaller.

IKS PVD company, decorative coating machine, tools coating machine, DLC coating machine, optical coating machine, PVD vacuum coating line, the turn-key project is available. Contact us now, E-mail: iks.pvd@foxmail.com