Atomic Layer Deposition (ALD)

Atomic Layer Deposition (ALD) can be considered as a kind of CVD. Ald is a method of producing binary compound films by alternately injecting gas phase precursor pulses into the reactor and chemically adsorbing and reflecting them on the deposition substrate.

The process is similar to the general CVD process, but the surface reaction of atomic layer deposition in ALD is self-limiting, namely chemisorption self-limiting (CS) and sequential reaction self-limiting (RS), the chemical reaction of the new atomic film is directly related to the previous layer, in such a way that only one layer of atoms is deposited in each reaction.
In addition to self-restriction, in the ALD process, the parent material needs to be separated after a certain reaction to control the degree of reaction and the final film thickness.
At the time of separation, the excess reaction parent and by-products of the reaction are removed from the cavity by a sudden injection of a large amount of separation gas (Ar or N2). This ensures that the film can precipitate on the substrate in an orderly and quantitative manner.

IKS PVD company, decorative coating machine, tools coating machine, DLC coating machine, optical coating machine, PVD vacuum coating line, the turn-key project is available. Contact us now, E-mail: iks.pvd@foxmail.com