Chemical Vapor Deposition (ALD)

Chemical Vapor Deposition (ALD)
Atomic Layer Deposition (ALD) is a vacuum coating process in which a substance is deposited on a substrate layer by layer in the form of a single atomic layer.

ALD advantages: good uniformity of film formation, dense no holes, good step covering characteristics, can be carried out at low temperature (room temperature - 400℃), can be simple and accurate control of film thickness, widely applicable to different shapes of the substrate, no need to control the uniformity of reaction material flow. ALD disadvantages: Slow film formation. For example, zinc sulfide (ZnS) light-emitting layers for the production of nanostructured insulators (Al2O3/TiO2) and thin-film electroluminescent displays (TFEL). Compared with traditional CVD and PVD, ALD has the advantages of excellent 3D conformal film formation, large area uniformity, and precise thickness control, which is suitable for growing ultra-thin films on complex shape surfaces and high aspect ratio structures. At present, with the increase in the number of production lines of processes below 45nm, especially those of processes below 28nm, higher requirements for coating thickness and precision control, and the gradual presentation of high-density and high-aspect ratio structures of components, thin film deposition technology plays an increasingly important role in the semiconductor industry.

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