PECVD Working principle - SINA plate P
Apr 18, 2024| PECVD Working principle - SINA plate P
The SiNA system adopts an indirect microwave plasma-enhanced chemical vapor deposition method.
Advantages: It has good film uniformity and mass production ability.
3. The passivation of H (hydrogen) in the plasma on the surface of the silicon wafer and the diffusion of SiN hydrogen atoms into the silicon in the sintering process, so that H (hydrogen) passivation of the silicon surface and the grain boundaries in the body, suspension bonds and other defects, so that it no longer plays the role of the composite center, less the combination of a few carriers, improve the life of the minority carrier, thereby improving the quality of the silicon wafer and improving the efficiency of the solar cell.
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