Closed Field Non-equilibrium Magnetron Sputtering Technique

Closed field non-equilibrium magnetron sputtering technique

The non-equilibrium magnetron sputtering technology is based on the conventional sputtering target, which changes the magnetic field distribution on the surface of the sputtering target by changing the configuration of the magnet. Among them, the most common form is that the peripheral magnetic field strength is higher than the central magnetic field strength, the magnetic field line does not form a closed loop between the peripheral and the center, and some of the peripheral magnetic field lines can extend from the surface of the target to near the matrix. In such a magnetic field distribution, the plasma is no longer confined to the surface of the target, but can be extended to the surface of the substrate, which increases the ion beam density on the surface of the substrate. Using the ion beam with higher density but lower energy to assist deposition can not only improve the quality of the coating, but also avoid large internal stress. For the multi-target non-equilibrium magnetron sputtering technology with opposite adjacent magnetic poles, the magnetic field lines on the edges of the adjacent two targets can form a "closed trap" for escaping electrons, which effectively binds electrons to avoid the loss of electrons adsorbed to the wall of the vacuum chamber due to the weakening of the magnetic field, thus greatly improving the sputtering efficiency of the target. In this closed-field non-equilibrium magnetron sputtering technique, the plasma region is effectively confined to the middle region of the vacuum chamber, so the matrix can get the ideal ion bombardment. The four-target closed field non-equilibrium magnetron sputtering system is very effective for depositing uniform, dense and complex films on complex substrates, and can produce high density, high strength and high binding force coatings, which have been widely used in the preparation of (Cr,Ti,Al) N coatings.

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